Analysis of CPU Loading Effect on ESD Susceptibility
Abstract
Two complementary approaches are presented to help to understand how CPU loading affects the sensitivity of an electronic device to ESD (electrostatic discharge) stress. Both approaches rely on synchronized noise injection while the software is running at the desired load. One of the approaches monitors the device's current consumption while the other monitors the device's electromagnetic field to synchronize noise injections. These approaches revealed that as the CPU loading increases, the device becomes more active and hence more susceptible to ESD stress. Moreover, it was observed that, in each loading condition, the device randomly became susceptible. These complementary approaches enable the capturing of high/low active intervals as well as the injection of noise voltage to the desired activity, thus, allowing for the analysis of the effect of CPU loading on ESD susceptibility.
Recommended Citation
O. H. Izadi et al., "Analysis of CPU Loading Effect on ESD Susceptibility," Proceedings of the 2020 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity, pp. 176 - 181, Institute of Electrical and Electronics Engineers (IEEE), Sep 2020.
The definitive version is available at https://doi.org/10.1109/EMCSI38923.2020.9191545
Meeting Name
2020 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity, EMCSI 2020 (2020: Jul. 27-31, Virtual)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
CPU Loading; Electromagnetic Interference (EMI); Electrostatic Discharge (ESD); Noise Injection; Soft Failure
International Standard Book Number (ISBN)
978-172817430-3
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2020 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
10 Sep 2020
