Race Conditions among Protection Devices for a High Speed I/O Interface

Author

Jianchi Zhou
Javad Soleiman Meiguni
Sergej Bub
Steffen Holland, Nexperia B.V.
Guido Notermans
Yang Xu
Giorgi Maghlakelidze
David Pommerenke, Missouri University of Science and TechnologyFollow
Daryl G. Beetner, Missouri University of Science and TechnologyFollow

Abstract

The ESD coupling path and on-board impedances strongly affect the ESD rise time seen on a PCB trace. Possible race conditions between external and on-die ESD protection were studied using measurement-based models of the transient response and on-board passives. Results show the interplay of rise time and protection turn-on can prevent the external TVS from responding in time.

Recommended Citation

J. Zhou et al., "Race Conditions among Protection Devices for a High Speed I/O Interface," Proceedings of the 42nd Annual Electrical Overstress/Electrostatic Discharge Symposium (2020, Reno, NV), pp. 1 - 6, Institute of Electrical and Electronics Engineers (IEEE), Nov 2020.

Meeting Name

42nd Annual EOS/ESD Symposium (2020: Sep. 13-18, Reno, NV)

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Comments

National Science Foundation, Grant IIP-1916535

International Standard Book Number (ISBN)

978-172819461-5

International Standard Serial Number (ISSN)

0739-5159

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2020 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

10 Nov 2020