Investigation of Various Transformer Topologies for HF Isolation Applications

Abstract

High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Center for Research in Energy and Environment (CREE)

Second Research Center/Lab

Intelligent Systems Center

Comments

This work was supported by the U.S. Department of Energy, under Grant DE-EE0008449.

Keywords and Phrases

High-Frequency (HF) Transformers; Leakage Inductance; Magnetic and Electric Field Distribution; Parasitic Capacitance; Winding Arrangements

International Standard Serial Number (ISSN)

0093-3813

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2020 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Feb 2020

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