Title

Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs with High-Κ Gate Spacers

Abstract

In this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-κ gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was L G extension caused by the fringing field through high-κ gate spacers. The off-state leakage current decreased by over one order of magnitude. The ON-state current was remarkably enhanced by 180% over that of low-κ gate spacers. The high-κ gate spacer is indispensable for enhancing the performance of the JAM field-effect transistor in a sub 20-nm -gate length regime.

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Keywords and Phrases

fringing field; high-k gate spacers; JAM FET

International Standard Serial Number (ISSN)

0741-3106

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2014 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Dec 2014

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