First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs with Robust Junction Isolation

Author

Tae Kyun Kim
DongHyun Kim, Missouri University of Science and TechnologyFollow
Young Gwang Yoon
For full list of authors, see publisher's website.

Abstract

A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SS_min)=68 mV dec 2) drain-induced-barrier-lowering is 9 mV/V; and 3) ¹ON|^IOFF ratio > 1 x 10⁶. The JAM devices with smaller fin widths or longer gate lengths give superior short-channel characteristics and higher threshold voltages (V_th) due to their enhanced gate electrostatic controllability. The reverse back bias modulates V_th and SS favorably by virtue of a body-tied device, maintaining the substrate current due to junction leakage of < 1 x 10^-11 A.

Recommended Citation

T. K. Kim et al., "First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs with Robust Junction Isolation," IEEE Electron Device Letters, vol. 34, no. 12, pp. 1479 - 1481, Institute of Electrical and Electronics Engineers (IEEE), Dec 2013.

The definitive version is available at https://doi.org/10.1109/LED.2013.2283291

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Keywords and Phrases

Junction isolation; junctionless (JL) field-effect transistor (FET); junctionless-accumulation-mode (JAM) FET; Si bulk FinFET

International Standard Serial Number (ISSN)

0741-3106

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Dec 2013