Analysis of High Frequency Characteristics of Power Inverter using Accurate IGBT Model based on Datasheet and Measurement
Abstract
The output voltage and current from dc-ac inverter generate switching noises and may cause electromagnetic interference (EMI) problems to other electronic systems. To analyze high frequency switching behavior of an inverter accurately, an accurate IGBT model is essential. In this study, an insulated gate bipolar transistor (IGBT) is modeled using datasheet and measurement data to analyze the high frequency characteristics of a high-power full-bridge inverter. The effectiveness of the proposed IGBT model is verified by comparing the simulated results of the inverter using the proposed IGBT model with measured results in frequency domain.
Recommended Citation
H. Shim et al., "Analysis of High Frequency Characteristics of Power Inverter using Accurate IGBT Model based on Datasheet and Measurement," Proceedings of the 2015 IEEE Electrical Design of Advanced Packaging and Systems Symposium (2015, Seoul, South Korea), pp. 81 - 84, Institute of Electrical and Electronics Engineers (IEEE), Dec 2016.
The definitive version is available at https://doi.org/10.1109/EDAPS.2015.7383673
Meeting Name
2015 IEEE Electrical Design of Advanced Packaging and Systems Symposium, IEEE EDAPS 2015 (2015: Dec. 14-16, Seoul, South Korea)
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
electromagnetic interference; IGBT; inductance measurement; inverters; parasitic capacitance; semiconductor device modeling
International Standard Book Number (ISBN)
978-146738099-7
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2016 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Dec 2016
