Abstract
We calculate the dynamical behavior of a-Si:H thin-film transistors with an emphasis on the occupation dynamics of trap states. The appropriate rate equation for the occupation function of trap states is included. We show the relations of filling the trap states with the switch-on time and of emptying the trap charges with the switch-off time. The occupation functions in both cases are non-Fermi distribution. The quasi-equilibrium approximation underestimates those two time constants. Thus, transit time theory cannot describe the speeds of transistors made from disordered materials.
Recommended Citation
J. N. Bullock and C. Wu, "Occupation Dynamics of Trap States in an a-Si:H Thin-Film Transistor," Journal of Applied Physics, vol. 69, no. 2, pp. 1041 - 1046, American Institute of Physics (AIP), Jan 1991.
The definitive version is available at https://doi.org/10.1063/1.347420
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
0021-8979
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1991 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Jan 1991
