Learning Nanotechnology through Crossbar-Based Architecture and Carbon Nanotube (CNT) FETs
Abstract
As nanotechnology is emerging, (1) there is a strong need for well-educated nanoscale systems engineers by industry, and (2) research and education efforts are also called to overcome numerous nanoscale systems issues. This paper is to identify necessary teaching elements for nanotechnology and to propose a way to teach nanotechnology by introducing emerging technologies: Crossbar-based Nano-Architecture and Carbon Nanotube FETS. By investigating read-out scheme of the crossbar memory architectures with students, a set of teaching items have been identified for undergraduate nanotechnology curriculum. The simulation of the student shows that the CNTFET-based crossbar memory achieves improvements in both sensing voltages on/off ratio and noise margin compared to the molecular memory implementation.
Recommended Citation
I. Jung et al., "Learning Nanotechnology through Crossbar-Based Architecture and Carbon Nanotube (CNT) FETs," Proceedings of the IEEE International Conference on Microelectronic Systems Education (2011, San Diego, CA), pp. 60 - 63, Institute of Electrical and Electronics Engineers (IEEE), Jun 2011.
The definitive version is available at https://doi.org/10.1109/MSE.2011.5937093
Meeting Name
IEEE International Conference on Microelectronic Systems Education (2011: Jun. 5-6, San Diego, CA)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Carbon Nanotube FET; CNT FET; Cross-Bar Memories; Design Method; Emerging Technologies; Low Power; Molecular Memories; Nano Technology; Nano-Architecture; Nano-Scale System; Noise Margins; On/Off Ratio; Architecture; Carbon Nanotubes; Curricula; Memory Architecture; MESFET Devices; Microelectronics; Nanostructured Materials; Students; Nanotechnology; Integrated Circuits Design; Nano Technology Education
International Standard Book Number (ISBN)
978-1457705489; 978-1457705489
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jun 2011