IGBT and Diode Loss Estimation under Hysteresis Switching

Abstract

This paper presents a power loss estimation method for insulated-gate bipolar transistors (IGBTs) and diodes that operate under hysteresis switching. The method relies on datasheet information and three measurements in a phase leg: phase current, one IGBT switching gate signal, and the dc bus voltage across the phase leg. No parasitic models, thermal analysis, or slow simulations are required, and measurements can be provided from simulations or experiments. The method is validated for periodic pulsewidth modulation, then for aperiodic hysteresis switching. Results show that the proposed method is accurate while maintaining simplicity. It is promising for implementation in combined thermoelectric simulations and design optimization.

Department(s)

Electrical and Computer Engineering

Sponsor(s)

United States. Office of Naval Research
Grainger CEME

Comments

This work is supported in part by the Office of Naval Research under Grant N00014-08-1-0397, and the Grainger Center for Electric Machinery and Electromechanics at the University of Illinois at Urbana-Champaign.

Keywords and Phrases

DC-Bus Voltages; Design Optimization; Gate Signals; Hysteresis Switching; Loss Estimation; Phase Currents; Power-Losses; Semiconductor Loss; Computer Simulation; DC Power Transmission; Estimation; Hysteresis; Insulated Gate Bipolar Transistors (IGBT); Optimization; Semiconductor Diodes; Thermoanalysis; Switching; Aperiodic Switching; Electrothermal Design; IGBT Loss Estimation; Semiconductor Losses

International Standard Serial Number (ISSN)

0885-8993; 1941-0107

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Mar 2012

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