Performance Evaluation of Wide Bandgap Semiconductor Technologies in Automotive Applications
This paper evaluates the commercially available semiconductor switch technologies for automotive applications. For this purpose, conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with wide bandgap Gallium Nitride (GaN) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Various design aspects of commercially available wide bandgap switches are introduced. Afterwards, experimental efficiency measurements for SRM drive systems using different semiconductor technologies are performed. Methods to improve performance of the automotive drive system are introduced.
P. Shamsi et al., "Performance Evaluation of Wide Bandgap Semiconductor Technologies in Automotive Applications," Proceedings of the 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (2013, Columbus, OH), pp. 115-118, Institute of Electrical and Electronics Engineers (IEEE), Oct 2013.
The definitive version is available at https://doi.org/10.1109/WiPDA.2013.6695576
1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2013: Oct. 27-29, Columbus, OH)
Electrical and Computer Engineering
Keywords and Phrases
Automotive Applications; Efficiency Measurement; Gallium Nitrides (GaN); Improve Performance; Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET); Semiconductor Technology; Silicon Carbides (SiC); Wide-Band-Gap Semiconductor; Automobiles; Electric Equipment; Gallium Nitride; Insulated Gate Bipolar Transistors (IGBT); MOSFET Devices; Semiconductor Device Manufacture; Silicon Carbide; Energy Gap
International Standard Book Number (ISBN)
Article - Conference proceedings
© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Oct 2013