Performance Evaluation of Various Semiconductor Technologies for Automotive Applications

Abstract

This paper evaluates the commercially available semiconductor switches for automotive applications. For this purpose, a conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with a Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Performance criteria for automotive drive systems are compared between the two switches. Electromagnetic interferences due to the switching times of the switches are studied. A test is performed to measure the actual power losses for both switches. Using the simulated model of the heatsink, the temperature of the junction for each switch is estimated. Afterwards, the results are compared with the data provided in the technical documents of the switches.

Meeting Name

2013 28th Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (2013: Mar. 17-21, Long Beach, CA)

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Automotive Applications; Drive Systems; Performance Criterion; Semiconductor Technology; Silicon Carbides (SiC); Simulated Model; Switching Time; Technical Documents; Automobiles; Computer Simulation; Digital Storage; Electromagnetic Pulse; Electron Beam Lithography; Insulated Gate Bipolar Transistors (IGBT); MOSFET Devices; Semiconductor Device Manufacture; Silicon Carbide; Power Electronics

International Standard Book Number (ISBN)

978-1467343541

International Standard Serial Number (ISSN)

1048-2334

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Mar 2013

Link to Full Text

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