Near-Field Shielding Performances of Absorbing Materials for Integrated Circuits (IC) Applications. Part II: Crossing Excitation

Abstract

This contribution analyzes the performance of a commercial absorbing material, in near field, selected for the reduction of electromagnetic emissions generated by an integrated circuit (IC). The signal port is placed as far as possible from the ground port, in order to force the current to follow the longest path. Shielding effectiveness, wave impedance, and Reflection, Transmission, and Absorbtion (RTA) plots, obtained from full-wave simulations, are compared with the configuration 'lateral' described in Part I, in which the ports are placed in two adjacent pins of the IC. Both arrangements reported in Part I for the absorber are adopted: as patch on top of the plastic package of the IC and as an enclosure totally covering the IC.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Electric Impedance; Electromagnetic Shielding; Plastics; Reflection; Shielding; Timing Circuits; Absorbing Materials; Attenuation; Face; Integrated Circuit Modeling; Lossy Materials; Near Fields; Pins; Ports (Computers); Wave Impedances; Integrated Circuits; Near Field (NF); Wave Impedance

International Standard Serial Number (ISSN)

0018-9375; 1558-187X

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2018 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Feb 2018

Link to Full Text

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