A Study on Correlation between Near-Field EMI Scan and ESD Susceptibility of ICs
Abstract
Correlation between near-field EMI scan and ESD susceptibility scan of a cellphone CPU IC is investigated. It is shown that the ESD susceptibility of the CPU IC depends on the activity of the IC. Based on the obtained correlation between these two scans, it is sufficient to perform the ESD susceptibility scan only by running the application which highly loads the CPU. This reduces the ESD susceptibility measurement time as well as the probability of physical damage to the IC.
Recommended Citation
A. Hosseinbeig et al., "A Study on Correlation between Near-Field EMI Scan and ESD Susceptibility of ICs," Proceedings of the 2017 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (2017, Washington, DC), pp. 169 - 174, Institute of Electrical and Electronics Engineers (IEEE), Aug 2017.
The definitive version is available at https://doi.org/10.1109/ISEMC.2017.8077861
Meeting Name
2017 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (2017: Aug. 7-11, Washington, DC)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Electromagnetic Compatibility; Electrostatic Devices; Electrostatic Discharge; Timing Circuits; Cell Phone; Near Fields; Physical Damages; Soft Failure; Susceptibility Measurements; Integrated Circuits; EMI; ESD; TLP
International Standard Book Number (ISBN)
978-1-5386-2231-5; 978-1-5386-2229-2
International Standard Serial Number (ISSN)
2158-1118
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2017 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Aug 2017