Modeling of Electric Field Distribution and its Corelation with Breakdown Strength in Diphasic Dielectrics
Abstract
An electric field distribution in a 3D diphasic dielectric structure with inclusions randomly dispersed in a host phase is simulated using a boundary element method (BEM) to mimic real-world system. A dielectric composite is assumed to undergo the intrinsic breakdown, and a percolation model is used to define the initiation of breakdown process. The simulations comprehensively identify the impact of the inclusion proximity, orientation, dielectric contrast, inclusion volume fraction, and role of interfaces on breakdown strength of diphasic composites. The quantitative correlation between all these factors and the breakdown strength of composites has been established.
Recommended Citation
S. K. Patil et al., "Modeling of Electric Field Distribution and its Corelation with Breakdown Strength in Diphasic Dielectrics," Proceedings of the 17th IEEE International Symposium on Applications of Ferroelectrics (2008, Santa Fe, NM), vol. 3, Institute of Electrical and Electronics Engineers (IEEE), Feb 2008.
The definitive version is available at https://doi.org/10.1109/ISAF.2008.4693738
Meeting Name
17th IEEE International Symposium on Applications of Ferroelectrics (2008: Feb. 23-28, Santa Fe, NM)
Department(s)
Electrical and Computer Engineering
Second Department
Materials Science and Engineering
Keywords and Phrases
Carbon fiber reinforced plastics; Dielectric materials; Electric breakdown; Electric field effects; Electric fields; Impact strength; Inclusions; Numerical analysis; Phase interfaces; Three dimensional; Breakdown strengths; Dielectric composites; Field distributions; Percolation models; Quantitative correlations; Boundary element method
International Standard Book Number (ISBN)
978-1-4244-2744-4
International Standard Serial Number (ISSN)
1099-4734; 2375-0448
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2008 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Feb 2008