A Frequency Tunable High Sensitivity H-Field Probe using Varactor Diodes and Parasitic Inductance
Abstract
A frequency-tunable resonant magnetic field probe is designed for near-field scanning applications for the radio frequency interference studies. Tunable resonance is achieved by using a varactor diode providing the required capacitance and the parasitic inductance of a magnetic loop (i.e., a parallel LC circuit). An equivalent circuit model for the probe is described, analyzed, and used for designing the probe for achieving maximum sensitivity. The resonance frequency of the designed probe is tunable in the frequency range of 900-2260 MHz that covers multiple radio bands, such as the GSM900, UMTS, and GPS bands. The sensitivity of the probe at the resonance frequency is about 7-9 dB higher than that of an equivalently sized broadband magnetic field probe throughout the tunable frequency range. The measured frequency response and sensitivity over a microstrip trace using the fabricated probe shows good agreement with the simulated results of the equivalent circuit model and the full-wave simulation model.
Recommended Citation
S. R. Shinde et al., "A Frequency Tunable High Sensitivity H-Field Probe using Varactor Diodes and Parasitic Inductance," IEEE Transactions on Electromagnetic Compatibility, vol. 58, no. 1, pp. 331 - 334, Institute of Electrical and Electronics Engineers (IEEE), Feb 2016.
The definitive version is available at https://doi.org/10.1109/TEMC.2015.2508898
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Circuit simulation; Circuit theory; Diodes; Frequency response; Inductance; Magnetic fields; Magnetism; Natural frequencies; Partial discharges; Radio interference; Radio waves; Reconfigurable hardware; Resonance; Varactors; Frequency tunable; GSM band; Magnetic field probe; Radio frequency interference; Varactor diodes; Probes; GPS band; receiver desensitization; resonant magnetic field probe
International Standard Serial Number (ISSN)
0018-9375
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2016 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Feb 2016