Effects of Time-Variant Non-Linear TSV Parameters on Transient Analysis for Signal Integrity
Abstract
This paper looks at the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
Recommended Citation
S. Piersanti et al., "Effects of Time-Variant Non-Linear TSV Parameters on Transient Analysis for Signal Integrity," Proceedings of the 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility (2015, Taipei, Taiwan), Institute of Electrical and Electronics Engineers (IEEE), May 2015.
The definitive version is available at https://doi.org/10.1109/APEMC.2015.7175241
Meeting Name
2015 Asia-Pacific International Symposium on Electromagnetic Compatibility (2015: May 26-29, Taipei, Taiwan)
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Center for High Performance Computing Research
Second Research Center/Lab
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Silicon; Capacitance; Substrates; Through-Silicon Vias; Equivalent Circuits; Crosstalk; Integrated Circuit Modeling
International Standard Serial Number (ISSN)
2162-7673
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2015 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 May 2015
