Abstract
With molecular-scale materials, devices and fabrication techniques recently being developed, high-density computing systems in the nanometer domain emerge. An array-based nanoarchitecture has been recently proposed based on nanowires such as carbon nanotubes (CNTs) and silicon nanowires (SiNWs). High-density nanoarray-based systems consisting of nanometer-scale elements are likely to have many imperfections; thus, defect-tolerance is considered one of the most significant challenges. In this paper we propose a probabilistic yield model for the array-based nanoarchitecture. The proposed yield model can be used (1) to accurately estimate the raw and net array densities, and (2) to design and optimize more defect and fault-tolerant systems based on the array-based nanoarchitecture. As a case study, the proposed yield model is applied to the defect-tolerant addressing scheme called h-hot addressing and simulation results are discussed.
Recommended Citation
S. Zhang et al., "Modeling Yield of Carbon-Nanotube/Silicon-Nanowire FET-Based Nanoarray Architecture with H-Hot Addressing Scheme," Proceedings of the 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (2004, Cannes, France), pp. 356 - 364, IEEE Computer Society, Oct 2004.
The definitive version is available at https://doi.org/10.1109/DFTVS.2004.1347860
Meeting Name
19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (2004: Oct. 10-13, Cannes, France)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
C; CNT; FET-Based Nanoarray Architecture; Si; SiNW; Array-Based Nanoarchitecture; Carbon Nanotubes; Circuit Simulation; Computer Architecture; Defect-Tolerance; Defect-Tolerant Addressing Scheme; Defect-Tolerant Systems; Elemental Semiconductors; Fabrication Techniques; Fault-Tolerant Systems; H-Hot Addressing Scheme; High-Density Computing Systems; Integrated Circuit Modelling; Integrated Circuit Technology; Integrated Circuit Yield; Molecular-Scale Materials; Nanoelectronics; Nanometer-Scale Elements; Nanotube Devices; Nanowires; Net Array Densities; Probabilistic Yield Model; Raw Array Densities; Silicon; Silicon Nanowires; Simulation; Yield Modeling
International Standard Book Number (ISBN)
769522416
International Standard Serial Number (ISSN)
1550-5774
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2004 IEEE Computer Society, All rights reserved.
Publication Date
01 Oct 2004
