Double reflection dips - from grating ruled semiconductors

Author

Le-Fu Teng

Abstract

"The double dips, previously observed by Fischer, Anderson, et al., which appeared in the reflection spectra of grating surfaces on the Te-doped semiconductors GaAs and InSb around the plasmon and phonon frequencies have been measured in more detail. In the plasmon region, several possible explanations of the phenomenon are discussed. A simple equation checked with the rigorous theory is proposed and is shown to fit the data well. In the phonon region, the extra dip is calculated and identified as being caused by surface phonons"--Abstract, page ii.

Advisor(s)

Alexander, Ralph William, Jr.

Committee Member(s)

Levenson, L. L., 1928-1998
Tyler, Israel L.
James, William Joseph
Bell, Robert John, 1934-

Department(s)

Physics

Degree Name

Ph. D. in Physics

Publisher

University of Missouri--Rolla

Publication Date

1974

Pagination

vii, 84 pages

Note about bibliography

Includes bibliographical references (pages 82-83).

Rights

© 1974 Le Fu Teng, All rights reserved.

Document Type

Dissertation - Open Access

File Type

text

Language

English

Subject Headings

Plasmons (Physics) -- SpectraPhonons -- SpectraDoped semiconductors

Thesis Number

T 3016

Print OCLC #

6012227

Electronic OCLC #

914285359

Recommended Citation

Teng, Le-Fu, "Double reflection dips - from grating ruled semiconductors" (1974). Doctoral Dissertations. 302.
https://scholarsmine.mst.edu/doctoral_dissertations/302