Doctoral Dissertations

Ki Hyun Yoon

Abstract

"An experimental electron impact ionization source was used to determine the presence of various neutral atoms and molecules on metallized and bare surfaces of silicon wafers. The metallization consisted of thin films of nicke l and gold separately and in combination. The major surface contaminates on all samples were found to be F, Na, Cl, K, CO, and CO2. The surface concentration of these species was found to be sensitive to the sample temperature up to 550 °C, the maximum temperature used in this study.

In the course of the mass spectrometric study, it was found that crystallites were formed on samples coated with nickel and gold films in combination. Several experimental methods were used to study these crystallites and to determine their origin. These methods included x-ray diffraction, scanning electron microscopy, and in-depth Auger electron spectroscopy. The crystallites were identified as NiSi2.

Diffusion appeared to be important to the formation of the NiSi2. Therefore, in-depth Auger electron spectroscopy was used to study the diffusion kinetics of nickel in silicon. The activation energy for diffusion of nickel in silicon was found to be 38 kcal mole-1, in the temperature range of 250 to 350 °C"-- Abstract, pp. ii-iii

Advisor(s)

Levenson, L. L., 1928-1998
Lewis, Gordan

Committee Member(s)

Anderson, H. U. (Harlan U.)
Hale, Edward Boyd
James, William Joseph

Department(s)

Materials Science and Engineering

Degree Name

Ph. D. in Ceramic Engineering

Publisher

University of Missouri--Rolla

Publication Date

1975

Pagination

xii, 125 pages

Note about bibliography

Includes bibliographical references (pages 96-98)

Rights

© 1975 Ki Hyun Yoon, All rights reserved.

Document Type

Dissertation - Open Access

File Type

text

Language

English

Thesis Number

T 3058

Print OCLC #

6013492

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