Doctoral Dissertations
Abstract
"Single crystals of strontium titanate implanted with boron were found to have highly conductive surface layers. The effects of varying dose from 1016 to 1017 ions/cm2, implantation voltage from 50 to 75 keV, and annealing conditions on the room temperature surface resistance and Hall mobility are presented in this study. A major result is that, for the most part, variation of the implantation voltage did not have a major effect on the sheet resistances obtained by boron implantation of strontium titanate, while dose and annealing conditions have major effects.
Doses of 5 X 1016 ions/cm2 required annealing on the order of one hour at 5(X) K for maximum reduction of the roan temperature resistance in the implanted layer. Samples implanted with a dose of 1 X 1017 ions/crn2 required slightly higher temperatures (approximately 575 K) to obtain a minimum resistance at roan temperature.
Long term (several weeks) roan temperature annealing was found to occur in high dose samples. After one to t\\X> months at roan temperature followed by an anneal to 575 K, the surface resistances were found to be lower than those produced by the annealing of a freshly implanted sample to 575 K. 1he conductance was found to be semi-metallic with surface resistances of 200 ohms/square after such anneals.
The average Hall mobility at roan temperature was found to be on the order of 4.8 cm2/volt-sec after annealing. Variations of between 2.8 X 1014 and 1.1 X 1016 electrons/cm2 were determined for the density of surface carriers. These correspond to doping efficiencies of between 0.5 and 11 % for the 100 keV implants and 1.7 and 7% for the 50 keV implants.
Comparisons between samples from different boules were found to yield different results under some conditions but not under other conditions. When the annealing temperature was below 625 K, final room temperature resistances were found to be independent of boule differences ana implantation conditions. Above this temperature, the densities of surface carriers were lower and wide variations in surface resistances measured at room temperature were observed. These differences were probably due to differences in initial impurity concentrations among the different boules.
Differences in crystallographic orientation relative to the ion beam produced no major differences in the surface resistance"--Abstract, pp. ii-iii
Advisor(s)
Gerson, Robert, 1923-2013
Committee Member(s)
Levenson, L. L., 1928-1998
Parks, William F.
Hale, Edward Boyd
James, William Joseph
Department(s)
Physics
Degree Name
Ph. D. in Physics
Publisher
University of Missouri--Rolla
Publication Date
Spring 1981
Pagination
xi, 109 pages
Note about bibliography
Includes bibliographical references (pages 91-96)
Rights
© 1981 Connie MacDonald Cooper, All rights reserved.
Document Type
Dissertation - Open Access
File Type
text
Language
English
Thesis Number
T 4649
Print OCLC #
8660642
Recommended Citation
Cooper, Connie MacDonald, "Boron implanted strontium titanate" (1981). Doctoral Dissertations. 125.
https://scholarsmine.mst.edu/doctoral_dissertations/125