Abstract
In situ nanoindentation experiments have been widely adopted to characterize material behaviors of microelectronic devices. This work introduces the latest developments of nanoindentation experiments in the characterization of nonlinear material properties of 3D integrated microelectronic devices using the through-silicon via (TSV) technique. The elastic, plastic, and interfacial fracture behavior of the copper via and matrix via interface were characterized using small-scale specimens prepared with a focused ion beam (FIB) and nanoindentation experiments. A brittle interfacial fracture was found at the Cu/Si interface under mixed-mode loading with a phase angle ranging from 16.7° to 83.7°. The mixed-mode fracture strengths were extracted using the linear elastic fracture mechanics (LEFM) analysis and a fracture criterion was obtained by fitting the extracted data with the power-law function. The vectorial interfacial strength and toughness were found to be independent with the mode-mix.
Recommended Citation
C. Wu et al., "In Situ Mechanical Characterization of the Mixed- Mode Fracture Strength of the Cu/Si Interface for TSV Structures," Micromachines, vol. 10, no. 2, MDPI AG, Jan 2019.
The definitive version is available at https://doi.org/10.3390/mi10020086
Department(s)
Civil, Architectural and Environmental Engineering
Research Center/Lab(s)
Center for High Performance Computing Research
Keywords and Phrases
FIB; Fracture; Micro-cantilever beam; Mixed-mode; Nanoindentation; TSV
International Standard Serial Number (ISSN)
2072-666X
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2019 MDPI AG, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
01 Jan 2019
