Microstructure of Cu₂O/Si Interfaces, Made by Epitaxial Electrodeposition

Author

Frank Ernst
Jay A. Switzer, Missouri University of Science and TechnologyFollow

Abstract

Cu₂O can be electrodeposited epitaxially onto Si (001) single-crystal substrates with an orientation relationship that can be described as a 45° rotation around the <001> direction that both crystals have in common along the growth direction. We show that this orientation relationship corresponds to maximum “reciprocal-space overlap”. In apparent contradiction to the unique orientation relationship, conventional, high-resolution, and high-resolution analytical transmission electron microscopy has revealed that an amorphous interlayer, which has a thickness of about 4 nm and mainly consists of SiO2, separates the Cu₂O layer and the Si substrate. Potential micromechanisms for the evolution of this structure during early stages of growth are discussed.

Recommended Citation

F. Ernst and J. A. Switzer, "Microstructure of Cu₂O/Si Interfaces, Made by Epitaxial Electrodeposition," Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, München, Jan 2003.

Department(s)

Chemistry

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2003 München, All rights reserved.

Publication Date

01 Jan 2003