Electrochemical and Photoelectrochemical Deposition of Thallium(III) Oxide Thin Films

Abstract

Thallium (III) oxide is a degenerate n-type semiconductor with high optical transparency and electrical conductivity. Films of thallium(III) oxide can be electrochemically deposited onto conducting and p-type semiconducting substrates, and photoelectrochemically deposited onto n-type semiconducting substrates. Films deposited at currents below the mass transport limit onto platinum or stainless steel were columnar, and the current efficiency on stainless steel was 103 ±2%. Dendritic films were deposited at mass-transport-limited currents. Films were deposited with thicknesses ranging from 0.1 μm on n-silicon, to 170 μm on stainless steel. the photoelectrochemically deposited films were “direct-written” onto n-silicon, since the material was deposited only at irradiated portions of the electrode. Thin films were grown by irradiating the n-silicon with 450 nm monochromatic light, since the light was strongly absorbed by the thallium(III) oxide. the most uniform thin films were deposited when the n-silicon was initially irradiated with a short pulse of high intensity light. the pulse apparently promoted instantaneous nucleation of a high density of thallium(III) oxide nuclei.

Department(s)

Chemistry

International Standard Serial Number (ISSN)

0884-2914

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1989 Materials Research Society (MRS), All rights reserved.

Publication Date

01 Jan 1989

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