Resistance Switching in Electrodeposited VO 2 Thin Films
Films of VO 2 are deposited by electrochemically reducing a triethanolamine complex of V(V) in an aqueous solution, followed by a short anneal at 400 °C. The VO 2 undergoes a metal-to-insulator transition (MIT) at 322 K, and exhibits sharp resistance switching at room temperature with very low current (0.5 mA) and voltage (0.12 V) requirements. The electrodeposition method opens up inexpensive possibilities for the fabrication of ultrafast switches, Mott field effect transitions, memristors, and solid-state memory. © 2011 American Chemical Society.
J. A. Koza et al., "Resistance Switching in Electrodeposited VO 2 Thin Films," Chemistry of Materials, American Chemical Society (ACS), Jan 2011.
The definitive version is available at https://doi.org/10.1021/cm2019394
International Standard Serial Number (ISSN)
Article - Journal
© 2011 American Chemical Society (ACS), All rights reserved.
01 Jan 2011