Resistance Switching in Electrodeposited VO 2 Thin Films

Author

Jakub A. Koza
Zhen He
Andrew S. Miller
Jay A. Switzer, Missouri University of Science and TechnologyFollow

Abstract

Films of VO 2 are deposited by electrochemically reducing a triethanolamine complex of V(V) in an aqueous solution, followed by a short anneal at 400 °C. The VO 2 undergoes a metal-to-insulator transition (MIT) at 322 K, and exhibits sharp resistance switching at room temperature with very low current (0.5 mA) and voltage (0.12 V) requirements. The electrodeposition method opens up inexpensive possibilities for the fabrication of ultrafast switches, Mott field effect transitions, memristors, and solid-state memory. © 2011 American Chemical Society.

Recommended Citation

J. A. Koza et al., "Resistance Switching in Electrodeposited VO 2 Thin Films," Chemistry of Materials, American Chemical Society (ACS), Jan 2011.

The definitive version is available at https://doi.org/10.1021/cm2019394

Department(s)

Chemistry

International Standard Serial Number (ISSN)

0897-4756

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 American Chemical Society (ACS), All rights reserved.

Publication Date

01 Jan 2011