Low-temperature Electrodeposition of the High-temperature Cubic Polymorph of Bismuth(III) Oxide
Abstract
Nanocrystalline films of δ-Bi₂O₃ were electrodeposited at 65 °C directly from alkaline solutions of tartrate-complexed Bi(III). This face-centered-cubic polymorph of Bi₂O₃ is normally only stable at high temperatures (729-825 °C). The material has the highest known oxide ion mobility. We propose that the high temperature form of the oxide is stabilized due to the nanocrystalline (70 nm) size of the particles in the film. The oxide also deposits epitaxially onto a single-crystal Au(110) substrate with strong in-plane and out-of-plane orientation. The large lattice mismatch (35.4%) is accommodated by forming a coincidence lattice, in which the δ-Bi₂O₃ is rotated 90° relative to the Au (110) substrate. The epitaxial relationship between film and substrate may also serve to stabilize the high-temperature structure.
Recommended Citation
E. W. Bohannan et al., "Low-temperature Electrodeposition of the High-temperature Cubic Polymorph of Bismuth(III) Oxide," Solid State Ionics, Elsevier, Jan 2000.
The definitive version is available at https://doi.org/10.1016/S0167-2738(00)00625-1
Department(s)
Chemistry
International Standard Serial Number (ISSN)
0167-2738
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2000 Elsevier, All rights reserved.
Publication Date
01 Jan 2000
