Transparency and Room Temperature Ferromagnetism in Diluted Magnetic Polycrystalline Zn₁₋ₓCrₓTe Non-Oxide II-VI Semiconductor Compounds

Abstract

Polycrystalline Zn1-xCrxTe samples for x = 0.00, 0.05, 0.10, 0.15, 0.18, and 0.20 were synthesized by solid-state reaction, and their physical properties were studied for the purpose of identifying a novel non-oxide transparent diluted magnetic semiconductor (DMS). Their transport properties exhibit semiconducting behavior for low Cr concentrations and become conductors for higher Cr concentration concentrations. Ferromagnetic behavior was observed in Cr-doped ZnTe with Curie temperature Tc increasing as Cr concentration increases. At x = 0.20 Cr concentration, the system has Tc above room temperature, indicating an interesting II-VI ferromagnetic semiconductor. Furthermore, optical transparency in the visible light range was found to be 30-85 % for different Cr concentration concentrations. Also, according to the electrical transport measurement data in this study, the resistivity doesn't exhibit any significant change as the temperature increases for x = 0.20. This consistent resistivity exhibits a possible candidacy for further studies of the sample Zn0.80Cr0.20Te for half-metallic ferromagnetic properties.

Department(s)

Chemistry

Second Department

Physics

Comments

The work was supported in part by a grant from NSF DMR-1255607.

Keywords and Phrases

Diluted Magnetic Semiconductor (DMS); Half Metallic Ferromagnetism; Non-Oxide Transparent Conductor; Room Temperature Ferromagnetism; Transition Metal Dichalcogenide (TMD); ZnCrTe

International Standard Serial Number (ISSN)

0925-8388

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2022 Elsevier, All rights reserved.

Publication Date

30 Nov 2022

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