Abstract

A process for forming an epitaxial film comprising spinning a substrate having an ordered crystal structure ; heating the substrate during spinning to a temperature between 70° C. and 150° C .; dripping epitaxial film precursor solution onto the spinning substrate , where the precursor solution comprises inorganic film precursor material in a solvent ; and continuing the heating and spinning to remove the solvent and epitaxially grow the epitaxial film on the substrate .

Department(s)

Chemistry

Comments

Assignee : The Curators of the University of Missouri, Columbia , MO (US)

Patent Application Number

16 / 398,430

Patent Number

US 2020/0347512 A1

Document Type

Patent

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2021 Curators of the University of Missouri, All rights reserved.

Publication Date

05 Nov 2020

Included in

Chemistry Commons

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