A process for forming an epitaxial film comprising spinning a substrate having an ordered crystal structure ; heating the substrate during spinning to a temperature between 70° C. and 150° C .; dripping epitaxial film precursor solution onto the spinning substrate , where the precursor solution comprises inorganic film precursor material in a solvent ; and continuing the heating and spinning to remove the solvent and epitaxially grow the epitaxial film on the substrate .
J. A. Switzer, "Spincoating Epitaxial Films,", Nov 2020.
Patent Application Number
16 / 398,430
US 2020/0347512 A1
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05 Nov 2020