Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and its Applications
We demonstrate area-selective atomic layer deposition (ALD) of oxides on DNA nanostructures. Area-selective ALD of Al2O3, TiO2, and HfO2 was successfully achieved on both 2D and 3D DNA nanostructures deposited on a polystyrene (PS) substrate. The resulting DNA-inorganic hybrid structure was used as a hard mask to achieve deep etching of a Si wafer for antireflection applications. ALD is a widely used process in coating and thin film deposition; our work points to a way to pattern oxide materials using DNA templates and to enhance the chemical/physical stability of DNA nanostructures for applications in surface engineering.
L. Hui et al., "Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and its Applications," ACS Nano, vol. 14, no. 10, pp. 13047-13055, American Chemical Society (ACS), Oct 2020.
The definitive version is available at https://doi.org/10.1021/acsnano.0c04493
Keywords and Phrases
Antireflection; DNA; Lithography; Pattern; Surface engineering
International Standard Serial Number (ISSN)
Article - Journal
© 2020 American Chemical Society (ACS), All rights reserved.
27 Oct 2020