Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and its Applications

Author

Liwei Hui
Rachel Nixon
Nathan Tolman
Jason Mukai
Ruobing Bai
Risheng Wang, Missouri University of Science and TechnologyFollow
Haitao Liu

Abstract

We demonstrate area-selective atomic layer deposition (ALD) of oxides on DNA nanostructures. Area-selective ALD of Al2O₃, TiO₂, and HfO₂ was successfully achieved on both 2D and 3D DNA nanostructures deposited on a polystyrene (PS) substrate. The resulting DNA-inorganic hybrid structure was used as a hard mask to achieve deep etching of a Si wafer for antireflection applications. ALD is a widely used process in coating and thin film deposition; our work points to a way to pattern oxide materials using DNA templates and to enhance the chemical/physical stability of DNA nanostructures for applications in surface engineering.

Recommended Citation

L. Hui et al., "Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and its Applications," ACS Nano, vol. 14, no. 10, pp. 13047 - 13055, American Chemical Society (ACS), Oct 2020.

The definitive version is available at https://doi.org/10.1021/acsnano.0c04493

Department(s)

Chemistry

Comments

National Science Foundation, Grant CCF-1814797

Keywords and Phrases

Antireflection; DNA; Lithography; Pattern; Surface engineering

International Standard Serial Number (ISSN)

1936-0851; 1936-086X

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2020 American Chemical Society (ACS), All rights reserved.

Publication Date

27 Oct 2020

PubMed ID

33048526