Preparation of Uncapped CdSe₁₋ₓSₓ Semiconducting Nanocrystals by Mechanical Alloying

Author

Guolong Tan
Shaohua Li
James B. Murowchick
Clarissa A. Wisner
Nicholas Leventis, Missouri University of Science and TechnologyFollow
Zhonghua Peng

Abstract

Composition-tunable ternary CdSe_1-xS_xnanocrystals are among the most extensively studied alloyed semiconducting quantum dots. They are, however, almost exclusively prepared by wet chemical routes which lead to surface-capped nanoparticles. Herein, we show that simple mechanical alloying can be applied to prepare uncapped CdSe_1-xS_xnanocrystals through the entire composition range. the resulting nanocrystals have average sizes smaller than 9 nm, are chemically homogenous, and show a linear lattice parameter-composition and close-to-linear band gap-composition relationships, demonstrating the ability for band gap engineering through composition tuning.

Recommended Citation

G. Tan et al., "Preparation of Uncapped CdSe₁₋ₓSₓ Semiconducting Nanocrystals by Mechanical Alloying," Journal of Applied Physics, vol. 110, no. 12, American Institute of Physics (AIP), Jan 2011.

The definitive version is available at https://doi.org/10.1063/1.3669443

Department(s)

Chemistry

International Standard Serial Number (ISSN)

0021-8979

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jan 2011