Reentrant High-conduction State in CuIr₂S₄ under Pressure
Abstract
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.
Recommended Citation
A. B. Garg et al., "Reentrant High-conduction State in CuIr₂S₄ under Pressure," Solid State Communications, vol. 142, no. 7, pp. 369 - 372, Elsevier, May 2007.
The definitive version is available at https://doi.org/10.1016/j.ssc.2007.03.029
Department(s)
Chemistry
Keywords and Phrases
Conduction Bands; Correlation Methods; Electric Resistance; Pressure Effects; X Ray Diffraction Analysis; Angle Dispersive X-ray Diffraction Measurements; Chalcogenide Spinel; Conducting Phase; Copper Compounds; A. Inorganic Compounds; B. X-ray Diffraction; C. Electric Transport; D. High Pressure
International Standard Serial Number (ISSN)
0038-1098
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2007 Elsevier, All rights reserved.
Publication Date
01 May 2007
