Epitaxial Electrodeposition of High-aspect-ratio Cu₂O(110) Nanostructures on InP(111)

Abstract

Epitaxial cuprous oxide nanostructures with high aspect ratio were deposited electrochemically on n-InP(111) from aqueous solution at room temperature. High-resolution X-ray diffraction shows that the Cu2O and InP form three equivalent epitaxial orientation relationships that are rotated 120 relative to each other: Cu2O(110)[100] || InP(111)[10], Cu2O(110)[100] || InP(111)[01], and Cu2O(110)[100] || InP(111)[01]. the size and aspect ratio of the Cu2O nanostructures depend on the applied deposition current density. at a deposition current density of 0.125 mA/cm2, uniformly sized nanostructures 30 nm wide and 1000 nm long were obtained. Transmission electron microscopy reveals an amorphous, oxygen-rich interlayer and a crystalline Cu3P layer between the Cu2O and InP.

Department(s)

Chemistry

Sponsor(s)

Case Alumni Association
Case School of Engineering
National Science Foundation (U.S.)
United States. Department of Energy

Keywords and Phrases

Epitaxy; Nanostructures

International Standard Serial Number (ISSN)

0897-4756

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2005 American Chemical Society (ACS), All rights reserved.

Publication Date

01 Jan 2005

Link to Full Text

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