Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70-120 °C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)3, Al(acac)3, and Pd(hfac)2, and aqueous H2O2, tert-butyl peracetate, and H2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles.
D. Barua et al., "Supercritical-Carbon Dioxide-Assisted Cyclic Deposition of Metal Oxide and Metal Thin Films," Applied Physics Letters, vol. 88, no. 9, American Institute of Physics, Feb 2006.
The definitive version is available at https://doi.org/10.1063/1.2181651
Chemical and Biochemical Engineering
Keywords and Phrases
Film Thickness Increased Linearly; Metal Oxide And Metal Thin Films; Precursors Included Al(Hfac) 3, Al(Acac) 3, And Pd(Hfac) 2, And Aqueous H2 O2, Tert-Butyl Peracetate; Supercritical, Adsorption; Aluminum Compounds; Carbon Dioxide; Hydrogen; Metallic Films; Oxidation; Palladium; Reduction; Thermal Effects; Thin Films, Supercritical Fluids
International Standard Serial Number (ISSN)
Article - Journal
© 2006 American Institute of Physics, All rights reserved.
01 Feb 2006