Abstract
Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70-120 °C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)3, Al(acac)3, and Pd(hfac)2, and aqueous H2O2, tert-butyl peracetate, and H2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles.
Recommended Citation
D. Barua et al., "Supercritical-Carbon Dioxide-Assisted Cyclic Deposition of Metal Oxide and Metal Thin Films," Applied Physics Letters, vol. 88, no. 9, American Institute of Physics (AIP), Feb 2006.
The definitive version is available at https://doi.org/10.1063/1.2181651
Department(s)
Chemical and Biochemical Engineering
Keywords and Phrases
Film Thickness Increased Linearly; Metal Oxide And Metal Thin Films; Precursors Included Al(Hfac) 3, Al(Acac) 3, And Pd(Hfac) 2, And Aqueous H2 O2, Tert-Butyl Peracetate; Supercritical, Adsorption; Aluminum Compounds; Carbon Dioxide; Hydrogen; Metallic Films; Oxidation; Palladium; Reduction; Thermal Effects; Thin Films, Supercritical Fluids
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2006 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Feb 2006
Comments
The authors acknowledge financial support from NSF (Grant No. CTS- 0304296) and the NSF Science and Technology Center for Environmentally Responsible Solvents and Processes.