A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
J. W. Wilson et al., "Proton Damage in GaAs Solar Cells," IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Jan 1984.
The definitive version is available at http://dx.doi.org/10.1109/T-ED.1984.21544
Mining and Nuclear Engineering
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© 1984 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.