Abstract

A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.

Department(s)

Mining and Nuclear Engineering

International Standard Serial Number (ISSN)

0018-9383

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1984 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Share

 
COinS