Abstract
Crystallographic and electrical characterization techniques were performed on CdTe single crystal samples grown by the sublimation and physical vapor transport (SPVT) technique. The SPVT growth process described here has resulted in the routine growth of 45-50 mm diameter, 250-300 g boules of single crystal CdTe. As-grown material is p-type in the 5-10 ω cm range. Etch pit densities (EPD) are nominally 7x104 cm-2 along the [111] growth direction and 3x104 cm-2 along the [111] direction. X-ray full width at half maximum (FWHM) on recent samples is 8.6 arc sec compared to 8.5 arc sec theoretical. The as-grown p-type material displays room temperature mobility in the 80-90 cm2 V-1 s-1 range and displays acceptor levels due to Cd vacancies 0.045 eV above the valence band and due to Cd vacancy-donor complexes 0.16 eV above the valence band. The boules are a constant diameter over most of their length (∼5.5 cm) and generally display no visual or X-ray detectable twins or grain boundaries. © 1994.
Recommended Citation
J. L. Boone et al., "Electrical and Crystallographic Characterization of CdTe Grown by the Vapor Transport Method," Journal of Crystal Growth, vol. 139, no. 1 thru 2, pp. 27 - 36, Elsevier, May 1994.
The definitive version is available at https://doi.org/10.1016/0022-0248(94)90025-6
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
0022-0248
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Elsevier, All rights reserved.
Publication Date
01 May 1994
