Abstract

We calculate the dynamical behavior of a-Si:H thin-film transistors with an emphasis on the occupation dynamics of trap states. The appropriate rate equation for the occupation function of trap states is included. We show the relations of filling the trap states with the switch-on time and of emptying the trap charges with the switch-off time. The occupation functions in both cases are non-Fermi distribution. The quasi-equilibrium approximation underestimates those two time constants. Thus, transit time theory cannot describe the speeds of transistors made from disordered materials.

Department(s)

Electrical and Computer Engineering

International Standard Serial Number (ISSN)

0021-8979

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1991 American Institute of Physics (AIP), All rights reserved.

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