Title

Wide-Bandgap Semiconductor Technology: Its Impact on the Electrification of the Transportation Industry

Abstract

The efficiency of any electric vehicle (EV) is limited by the efficiency of its power electronic motor drive. Currently, EVs use conventional silicon (Si) insulated-gate bipolar transistor (IGBT) or Si metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. Si technology prevents traction motor drives from exceeding the low switching frequencies (tens of kilohertz) due to excessive switching losses. This is important as the size of passive components (and thus cost) is inversely related to the switching frequency.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Efficiency; Electric Drives; Electric Motors; Electron Beam Lithography; Field Effect Transistors; Insulated Gate Bipolar Transistors (IGBT); Metals; MOS Devices; MOSFET Devices; Oxide Semiconductors; Power MOSFET; Power Transistors; Semiconductor Device Manufacture; Silicon; Switching Frequency; Traction Motors; Transistors; Wide Band gap Semiconductors; Electronic Motors; Low Switching Frequency; Si Technology; Switching Loss; Traction Motor Drives; Transportation Industry; Semiconducting Silicon

International Standard Serial Number (ISSN)

2325-5897

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Share

 
COinS