Title

Performance Evaluation of Wide Bandgap Semiconductor Technologies in Automotive Applications

Abstract

This paper evaluates the commercially available semiconductor switch technologies for automotive applications. For this purpose, conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with wide bandgap Gallium Nitride (GaN) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Various design aspects of commercially available wide bandgap switches are introduced. Afterwards, experimental efficiency measurements for SRM drive systems using different semiconductor technologies are performed. Methods to improve performance of the automotive drive system are introduced.

Meeting Name

1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2013: Oct. 27-29, Columbus, OH)

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Automotive Applications; Efficiency Measurement; Gallium Nitrides (GaN); Improve Performance; Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET); Semiconductor Technology; Silicon Carbides (SiC); Wide-Band-Gap Semiconductor; Automobiles; Electric Equipment; Gallium Nitride; Insulated Gate Bipolar Transistors (IGBT); MOSFET Devices; Semiconductor Device Manufacture; Silicon Carbide; Energy Gap

International Standard Book Number (ISBN)

9781479911943

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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