Title

Microstructure of Cu₂O/Si Interfaces, Made by Epitaxial Electrodeposition

Abstract

Cu₂O can be electrodeposited epitaxially onto Si (001) single-crystal substrates with an orientation relationship that can be described as a 45° rotation around the <001> direction that both crystals have in common along the growth direction. We show that this orientation relationship corresponds to maximum “reciprocal-space overlap”. In apparent contradiction to the unique orientation relationship, conventional, high-resolution, and high-resolution analytical transmission electron microscopy has revealed that an amorphous interlayer, which has a thickness of about 4 nm and mainly consists of SiO2, separates the Cu₂O layer and the Si substrate. Potential micromechanisms for the evolution of this structure during early stages of growth are discussed.

Department(s)

Chemistry

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2003 München, All rights reserved.


Share

 
COinS