Microstructure of Cu₂O/Si Interfaces, Made by Epitaxial Electrodeposition
Cu₂O can be electrodeposited epitaxially onto Si (001) single-crystal substrates with an orientation relationship that can be described as a 45° rotation around the <001> direction that both crystals have in common along the growth direction. We show that this orientation relationship corresponds to maximum “reciprocal-space overlap”. In apparent contradiction to the unique orientation relationship, conventional, high-resolution, and high-resolution analytical transmission electron microscopy has revealed that an amorphous interlayer, which has a thickness of about 4 nm and mainly consists of SiO2, separates the Cu₂O layer and the Si substrate. Potential micromechanisms for the evolution of this structure during early stages of growth are discussed.
F. Ernst and J. A. Switzer, "Microstructure of Cu₂O/Si Interfaces, Made by Epitaxial Electrodeposition," Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, München, Jan 2003.
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