At present most theoretical studies of atomic clusters are limited to their physical properties referred to 0 K. To the best of our knowledge, there exists no theoretical study of the simultaneous dependence of cluster formation and cluster-size distributions on both pressure and temperature. In the present work both pressure and temperature effects on the formation of silicon clusters are explored. A universal semiempirical formula is obtained to show a general trend in the variation of binding energy as a function of cluster size for both atomic and molecular clusters.
S. S. Salk et al., "Pressure and Temperature Effects on the Energy of Formation for Silicon Clusters," Physical Review B (Condensed Matter), vol. 45, no. 3, pp. 1458 - 1461, American Institute of Physics (AIP), Jan 1992.
The definitive version is available at https://doi.org/10.1103/PhysRevB.45.1458
International Standard Serial Number (ISSN)
Article - Journal
© 1992 American Institute of Physics (AIP), All rights reserved.
01 Jan 1992