Quantal Estimates of Binding Energies of Large Silicon Clusters (Si)ₙ with N > 10
We employ a computationally accessible semi-empirical effective Hamiltonian method to calculate binding energies for large silicon clusters (Si)n, for n > 10. The differences in binding energy between different geometric structures at a given cluster size generally tend to decrease with cluster size. This implies the possibility of cluster growth close to crystalline structure with Td symmetry at certain finite temperatures.
T. Oshiro et al., "Quantal Estimates of Binding Energies of Large Silicon Clusters (Si)ₙ with N > 10," Solid State Communications, vol. 87, no. 9, pp. 801 - 804, Elsevier, Sep 1993.
The definitive version is available at https://doi.org/10.1016/0038-1098(93)90417-L
Keywords and Phrases
Crystal Growth; Crystal Structure; Crystal Symmetry; Electron Energy Levels; Estimation; Binding Energy; Cluster Size; Hamiltonian Method; Large Silicon Clusters; Quantal Estimates
International Standard Serial Number (ISSN)
Article - Journal
© 1993 Elsevier, All rights reserved.
01 Sep 1993