Magnetic Proximity Effect As a Pathway to Spintronic Applications of Topological Insulators
Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence 1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K, 3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.
I. Vobornik et al., "Magnetic Proximity Effect As a Pathway to Spintronic Applications of Topological Insulators," Nano Letters, vol. 11, no. 10, pp. 4079-4082, American Chemical Society (ACS), Oct 2011.
The definitive version is available at https://doi.org/10.1021/nl201275q
Keywords and Phrases
Fault-tolerant; Magnetic Proximity; Operating Condition; Spin Coherence; Spin-based Electronics; Spintronic Applications; Spintronic Device; Topological Insulators; X-ray Magnetic Circular Dichroism; Electric Insulators; Magnetic Storage; Manganese; Spectroscopy; Ferromagnetism
International Standard Serial Number (ISSN)
Article - Journal
© 2011 American Chemical Society (ACS), All rights reserved.
01 Oct 2011