Robust Fabry-Perot Interference in Dual-Gated Bi₂Se₃ Devices
We study Fabry-Perot interference in hybrid devices, each consisting of a mesoscopic superconducting disk deposited on the surface of a three-dimensional topological insulator. Such structures are hypothesized to contain protected zero modes known as Majorana fermions bound to vortices. The interference manifests as periodic conductance oscillations of magnitude ~ 0.1 e2 / h. These oscillations show no strong dependence on bulk carrier density or sample thickness, suggesting that they result from phase coherent transport in surface states. However, the Fabry-Perot interference can be tuned by both top and back gates, implying strong electrostatic coupling between the top and bottom surfaces of topological insulator.
A. D. Finck et al., "Robust Fabry-Perot Interference in Dual-Gated Bi₂Se₃ Devices," Applied Physics Letters, vol. 108, no. 20, American Institute of Physics (AIP), May 2016.
The definitive version is available at https://doi.org/10.1063/1.4949490
Keywords and Phrases
Electric Insulators; Reconfigurable Hardware; Superconducting Devices; Conductance Oscillations; Electrostatic Coupling; Fabry Perot Interference; Phase-coherent Transport; Sample Thickness; Strong Dependences; Topological Insulators; Fabry-Perot Interferometers
International Standard Serial Number (ISSN)
Article - Journal
© 2016 American Institute of Physics (AIP), All rights reserved.
01 May 2016