Chemically Gated Electronic Structure of a Superconducting Doped Topological Insulator System
Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.
L. A. Wray et al., "Chemically Gated Electronic Structure of a Superconducting Doped Topological Insulator System," Journal of Physics: Conference Series, vol. 449, no. 1, IOP Publishing, Jul 2013.
The definitive version is available at https://doi.org/10.1088/1742-6596/449/1/012037
10th International Conference on Materials and Mechanisms of Superconductivity (2012: Jul. 29-Aug. 3, Washington, DC)
Keywords and Phrases
Angle Resolved Photoemission Spectroscopy; Copper Atoms; Crystal Surfaces; Effect Of Chemicals; Electrical Field Strength; Majorana; Superconducting Properties; Topological Insulators; Electric Insulators; Electric Properties; Electronic Structure; Superconductivity
International Standard Serial Number (ISSN)
Article - Conference proceedings
© 2013 IOP Publishing, All rights reserved.