Abstract
We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process. ©2004 American Institute of Physics
Recommended Citation
A. Yamilov et al., "Ultraviolet Photonic Crystal Laser," Applied Physics Letters, American Institute of Physics (AIP), Jan 2004.
The definitive version is available at https://doi.org/10.1063/1.1808888
Department(s)
Physics
Keywords and Phrases
II-VI Semiconductors; Photonic Band Gap; Semiconductor Thin Films; Sputter Etching; Wide Band Gap Semiconductors; Optical pumping; Photonic crystals; Semiconductor lasers; Zinc compounds
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2004 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Jan 2004
