A model for a shallow donor impurity in a semiconductor is used to calculate two relationships and several conditions involving the chemical shift parameters. The model is based on the standard effective mass form for the donor electron wave function, the existence of a potential in the chemical cell which may be real, pseudo, or rather general in nature, and a few somewhat restrictive approximations. The parameters, Δ, δ and Λ are theoretically calculated and are shown to be related if the approximations are valid. These parameters determine the 1S multiplet level structure and it is shown how properties of the central cell potential can be deduced from a knowledge of this structure. As an example, the inverted structure for Si(Li) is discussed. The often-neglected parameter, Λ, is shown to be quite important. A length parameter is determined by the model and is a measure of the effective range of influence of the central cell potential. The model should be useful in determining if choices for the potential and wave function in the central cell region lead to self consistent results. The agreement between the theoretical predictions and the experimental data from both silicon and germanium and five donor impurities from both Group I (lithium) and Group V (arsenic, phosphorus, antimony and bismuth) suggest the model is reasonable. © 1973.




Air Force Office of Scientific Research, Grant None

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Article - Journal

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© 2023 Elsevier, All rights reserved.

Publication Date

01 Jan 1973

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