Temperature-Dependent Dielectric Function of Intrinsic Silicon: Analytic Models and Atom-Surface Potentials

Abstract

The optical properties of monocrystalline, intrinsic silicon are of interest for technological applications as well as fundamental studies of atom-surface interactions. For an enhanced understanding, it is of great interest to explore analytic models which are able to fit the experimentally determined dielectric function ϵ(TΔ,ω), over a wide range of frequencies and a wide range of the temperature parameter TΔ=(T-T0)/T0, where T0=293K represents room temperature. Here, we find that a convenient functional form for the fitting of the dielectric function of silicon involves a Lorentz-Dirac curve with a complex, frequency-dependent amplitude parameter, which describes radiation reaction. We apply this functional form to the expression [ϵ(TΔ,ω)-1]/[ϵ(TΔ,ω)+2], inspired by the Clausius-Mossotti relation. With a very limited set of fitting parameters, we are able to represent, to excellent accuracy, experimental data in the (angular) frequency range 0<ω<0.16a.u. and 0

Department(s)

Physics

Comments

National Science Foundation, Grant DMR-1810922

International Standard Serial Number (ISSN)

2469-9969; 2469-9950

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2023 American Physical Society, All rights reserved.

Publication Date

15 Jul 2022

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