Temperature-Dependent Dielectric Function of Intrinsic Silicon: Analytic Models and Atom-Surface Potentials
The optical properties of monocrystalline, intrinsic silicon are of interest for technological applications as well as fundamental studies of atom-surface interactions. For an enhanced understanding, it is of great interest to explore analytic models which are able to fit the experimentally determined dielectric function ϵ(TΔ,ω), over a wide range of frequencies and a wide range of the temperature parameter TΔ=(T-T0)/T0, where T0=293K represents room temperature. Here, we find that a convenient functional form for the fitting of the dielectric function of silicon involves a Lorentz-Dirac curve with a complex, frequency-dependent amplitude parameter, which describes radiation reaction. We apply this functional form to the expression [ϵ(TΔ,ω)-1]/[ϵ(TΔ,ω)+2], inspired by the Clausius-Mossotti relation. With a very limited set of fitting parameters, we are able to represent, to excellent accuracy, experimental data in the (angular) frequency range 0<ω<0.16a.u. and 0
C. Moore et al., "Temperature-Dependent Dielectric Function of Intrinsic Silicon: Analytic Models and Atom-Surface Potentials," Physical Review B, vol. 106, no. 4, article no. 045202, American Physical Society, Jul 2022.
The definitive version is available at https://doi.org/10.1103/PhysRevB.106.045202
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15 Jul 2022
National Science Foundation, Grant DMR-1810922