By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.
W. Zhang et al., "Electronic Fingerprints of Cr and V Dopants in the Topological Insulator Sb₂Te₃," Physical Review B, vol. 98, no. 11, American Physical Society (APS), Sep 2018.
The definitive version is available at https://doi.org/10.1103/PhysRevB.98.115165
Keywords and Phrases
Local Density of State; Point Defects; Quantum Anomalous Hall Effect; Topological Insulators
International Standard Serial Number (ISSN)
Article - Journal
© 2018 American Physical Society (APS), All rights reserved.
01 Sep 2018
The scanning tunneling microscopy studies at Rutgers were supported by NSF Grant No. DMR-1506618. S.B.Z. was supported by U.S. Department of Energy (DOE) Grant No. DE-SC0002623. D.W. was supported by NSF Grant No. EFMA-1542789. Supercomputer time was provided by the CCNI at RPI and NERSC under DOE Contract No. DEAC02-05CH11231. Single-crystal synthesis work was supported by NSF Grant No. DMR-1255607.